mt45w4mw16p Micron Semiconductor Products, mt45w4mw16p Datasheet - Page 21

• Manufacturer Part Number: mt45w4mw16p
• Description: Async/page Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 9:
Figure 14:
Figure 15:
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
Description
Input Capacitance
Input/Output Capacitance (DQ)
Capacitance Specifications and Conditions
AC Input/Output Reference Waveform
Output Load Circuit
Table 10:
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. AC test inputs are driven at V
Input
V
V
CC
SS
1
Output Load Circuit
Q
Q
2. Input timing begins at V
3. Output timing ends at V
DUT
times (10% to 90%) < 1.6ns.
the input test point may not be shown to scale.
V
T
CC
C
/2
= +25ºC; f = 1 MHz;
2
V
Conditions
1.8V
2.5V
3.0V
CC
V
IN
Q
30pF
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
= 0V
VccQ
R1
R2
CC
CC
Test Point
/2. Due to the possibility of a difference between V
Q/2.
Test Points
21
CC
Symbol
Q for a logic 1 and V
C
C
IN
IO
R1/R2
2.7KΩ
3.7KΩ
4.5KΩ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
2.5
SS
V
CC
Q for a logic 0. Input rise and fall
Q/2
Electrical Characteristics
Max
3
6
6
Output
©2003 Micron Technology, Inc. All rights reserved.
Units
pF
pF
CC
and V
Notes
1
1
CC
Q,