mt45w4mw16bcgb Micron Semiconductor Products, mt45w4mw16bcgb Datasheet - Page 34

• Manufacturer Part Number: mt45w4mw16bcgb
• Description: 64mb 4 Meg X 16 Async/page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Electrical Characteristics
Table 10:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Parameter
Voltage to any ball except V
Voltage on V
Voltage on V
Storage temperature (plastic)
Operating temperature (case)
Soldering temperature and time
Wireless
Industrial
10s (solder ball only)
CC
CC
Absolute Maximum Ratings
Q supply relative to V
supply relative to V
Notes:
1. This exceeds the CellularRAM Workgroup 1.5 specification of –0.3V to V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
; V
CC
Q supply relative to V
SS
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
SS
SS
34
–0.5V to (4.0V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–55°C to +150°C
–0.2V to +2.45V
–30°C to +85°C
–40°C to +85°C
–0.2V to +4.0V
CC
Electrical Characteristics
Rating
+260°C
Q + 0.3V, whichever is less)
©2005 Micron Technology, Inc. All rights reserved.
CC
Q + 0.3V.
1