mt47h256m8thn-3 Micron Semiconductor Products, mt47h256m8thn-3 Datasheet - Page 7

• Manufacturer Part Number: mt47h256m8thn-3
• Description: 2gb X4, X8 Twindie Ddr2 Sdram Functionality
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 4:
Temperature and Thermal Impedance
PDF: 09005aef8266acfe/Source: 09005aef8266ac6e
MT47H512M4_32M_16M_twindie.fm - Rev. B 1/08 EN
V
Symbol
IN
V
V
I
V
VREF
, V
I
DD
DD
OZ
DD
I
I
OUT
Q
L
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; Any input 0V ≤ V
not under test = 0V
Output leakage current; 0V ≤ V
disabled
V
DD
DD
DD
REF
Absolute Maximum Ratings
Q supply voltage relative to V
L supply voltage relative to V
supply voltage relative to V
leakage current; V
Notes:
Stresses greater than those listed in Table 4 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the device data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reli-
ability.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 5 on page 8, be maintained to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly.
Thermal impedances listed in Table 5 on page 8 apply to the current die revision and its
packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note
Table 6 on page 8. For designs that are expected to last several years and require the flex-
ibility to use several DRAM die shrinks, consider using final target theta values (rather
than existing values) to account for increased thermal impedances from the reduction in
die size.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
temperature is too high, use of forced air and/or heat sinks may be required to satisfy the
case temperature specifications.
DD
REF
C
REF
, V
specifications are not exceeded. In applications where the device’s ambient
≤ 0.6 × V
DD
=
TN-00-08: “Thermal Applications,”
Q, and V
V
alid V
OUT
SS
SS
DD
SS
SS
L
≤ V
Q; however, V
Q
REF
DD
DD
level
IN
L must be within 300mV of each other at all times.
Q; DQ and ODT
≤ V
DD
; All other balls
7
REF
may be ≥ V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Gb: x4, x8 TwinDie DDR2 SDRAM
DD
prior to using the thermal impedances in
Q provided that V
Min
–1.0
–0.5
–0.5
–0.5
DD
–10
–10
–4
Q.
Electrical Specifications
Max
+2.3
+2.3
+2.3
+2.3
+10
+10
+4
©2006 Micron Technology, Inc. All rights reserved
REF
≤ 300mV.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3