EMD12324PV Emlsi Inc., EMD12324PV Datasheet - Page 17

• Manufacturer Part Number: EMD12324PV
• Description: 512m 16m X 32 Mobile Ddr Sdram
• Manufacturer: Emlsi Inc.

Table 14: Register Programmed with Extended MRS
NOTE :
1. RFU(Reserved for future use) should stay “0” during MRS and EMRS cycle.
Table 15: EMRS for PASR(Partial Array Self Refresh) & DS(Driver Strength)
Table 16: Internal Temperature Compensated Self Refresh (TCSR)
NOTE :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 ℃ tolerance.
BA1
Address
Function
self refresh cycle automatically according to the two temperature range : Max 85℃, Max 45℃
Temperature Range
0
0
1
1
Max 85℃
Max 45℃
BA0
0
1
0
1
BA1
Mode Select
Mode Select
EMRS for DDR SDRAM
Normal MRS
Reserved
Reserved
BA0
MODE
Full Array
A12 ~ A10/AP
600
350
A6
0
0
1
1
Self Refresh Current (I
RFU
Driver Strength
A9
A5
0
1
0
1
*1
1/2 of Full Array
A8
500
250
17
Strength
Driver
Full
1/2
1/4
1/8
A7
DD
6)
A2
A6
0
0
0
0
1
1
1
1
DS
512M: 16M x 32 Mobile DDR SDRAM
1/4 of Full Array
A1
0
0
1
1
0
0
1
1
A5
450
200
A0
0
1
0
1
0
1
0
1
A4
RFU
EMD12324PV
PASR
*1
Size of Refreshed Array
A3
1/2 of Full Array
1/4 of Full Array
Preliminary
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
A2
Unit
PASR
㎂
A1
Rev 0.0
A0