irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 7

• Manufacturer Part Number: irfr220-01
• Description: Irfr220 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08519
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
-60
= 0 V; f = 1 MHz
DS
= V
0
GS
60
max
typ
min
120
(pF)
C
10 3
10 2
10
T j (
0
03aa32
o
C)
180
Rev. 01 — 14 August 2001
1
N-channel enhancement mode field effect transistor
Fig 10. Sub-threshold drain current as a function of
T
(A)
I D
j
10
10 -6
10 -3
10 -4
10 -1
10 -2
10 -5
= 25 C; V
gate-source voltage.
0
V DS (V)
003aaa135
C iss
C oss
C rss
DS
1
10 2
= 5 V
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2
min
3
typ
IRFR220
4
V GS (V)
max
03aa35
5
7 of 12