irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 2

• Manufacturer Part Number: irfr220-01
• Description: Irfr220 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 08519
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain (reverse) diode
I
I
D
D
DM
S
SM
DS
tot
j
DS
DGR
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak (diode forward) source current T
Quick reference data
Limiting values
Conditions
T
T
T
V
Conditions
T
T
T
T
T
T
j
mb
mb
j
j
mb
mb
mb
mb
mb
mb
GS
Rev. 01 — 14 August 2001
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; t
= 25 C;
= 25 C
= 25 C; t
= 10 V; I
D
Figure 1
p
p
N-channel enhancement mode field effect transistor
GS
= 2.9 A
GS
GS
10 s
10 s
= 10 V
= 10 V;
= 10 V;
GS
= 20 k
Figure 2
Figure 2
and
and
3
3
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
0.7
Min
55
55
IRFR220
Max
200
4.8
42
150
0.8
Max
200
200
4.8
3.0
19
42
+150
+150
4.8
19
20
2 of 12
Unit
V
A
W
Unit
V
V
V
A
A
A
W
A
A
C
C
C