si4816bdy Vishay, si4816bdy Datasheet - Page 7

• Manufacturer Part Number: si4816bdy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73026
S-61962-Rev. C, 09-Oct-06
0.00001
0.0001
0.001
0.01
0.1
40
10
10
1
1
1
0.0
0
Reverse Current vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.2
25
V
T
SD
V
J
DS
0.4
= 150 °C
– Source-to-Drain Voltage (V)
= 30 V
T
50
J
– Temperature (°C)
0.6
75
V
0.8
DS
= 24 V
100
T
0.01
1.0
100
J
0.1
10
= 25 °C
1
0.1
125
*r
1.2
Limited
DS(on)
*V
I
D(on)
GS
Single Pulse
T
C
Limited
>
= 25 °C
V
1.4
150
minimum V
DS
Safe Operating Area
–
1
Drain-to-Source Voltage (V)
GS
BV
at which r
DSS
Limited
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
0.001
0
I
is specified
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
2
V
0.01
100
GS
– Gate-to-Source Voltage (V)
Time (sec)
4
0.1
Vishay Siliconix
Si4816BDY
6
I
D
www.vishay.com
= 9.5 A
1
8
10
10
7