si4816bdy Vishay, si4816bdy Datasheet - Page 3

• Manufacturer Part Number: si4816bdy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73026
S-61962-Rev. C, 09-Oct-06
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
0.05
0.04
0.03
0.02
0.01
0.00
40
35
30
25
20
15
10
5
0
0
0
5
On-Resistance vs. Drain Current
1
V
DS
10
V
Output Characteristics
V
GS
I
– Drain-to-Source Voltage (V)
GS
D
= 4.5 V
– Drain Current (A)
= 10 thru 4 V
15
2
20
3 V
Symbol
I
V
C
rm
3
25
F
T
J
30
V
GS
= 25 °C, unless otherwise noted
4
= 10 V
2 V
35
V
I
V
40
F
r
5
r
= 1.0 A, T
= - 30 V, T
Test Conditions
= 30 V, T
I
V
V
F
r
r
= 1.0 A
= 30 V
= 10 V
J
J
J
= 100 °C
= 125 °C
= 125 °C
1200
1000
800
600
400
200
40
35
30
25
20
15
10
5
0
0
0.0
0
0.5
5
C
V
rss
1.0
GS
V
Min
Transfer Characteristics
DS
– Gate-to-Source Voltage (V)
1.5
10
– Drain-to-Source Voltage (V)
Capacitance
T
25 °C
2.0
C
0.004
= 125 °C
0.47
0.36
C
Typ
0.7
3.0
50
15
oss
Vishay Siliconix
2.5
Si4816BDY
C
3.0
iss
20
0.100
Max
0.50
0.42
10
20
www.vishay.com
- 55 °C
3.5
25
4.0
Unit
mA
pF
V
4.5
30
3