si4816bdy Vishay, si4816bdy Datasheet - Page 4

• Manufacturer Part Number: si4816bdy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
40
10
6
5
4
3
2
1
0
1
- 50
0.0
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
D
DS
= 6.8 A
2
V
= 15 V
SD
Q
0
0.4
T
g
J
– Source-to-Drain Voltage (V)
Threshold Voltage
– Total Gate Charge (nC)
= 150 °C
T
J
25
– Temperature (°C)
Gate Charge
4
0.6
50
0.8
I
D
6
= 250 µA
75
T
1.0
J
100
= 25 °C
8
1.2
125
150
1.4
10
0.05
0.04
0.03
0.02
0.01
0.00
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
- 50
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 6.8 A
= 10 V
2
V
GS
0.01
T
0
J
– Junction Temperature (°C)
– Gate-to-Source Voltage (V)
25
Time (sec)
4
I
50
D
0.1
= 6.8 A
S-61962-Rev. C, 09-Oct-06
Document Number: 73026
6
75
100
1
8
125
150
10
10