mrf6s18100n Freescale Semiconductor, Inc, mrf6s18100n Datasheet - Page 8

• Manufacturer Part Number: mrf6s18100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

8
MRF6S18100NR1 MRF6S18100NBR1
1.E+09
1.E+08
1.E+07
1.E+06
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
Figure 13. MTTF Factor versus Junction Temperature
90
Center 1.96 GHz
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
600 kHz
100 110 120 130 140 150 160 170 180
Reference Power
400 kHz
TYPICAL CHARACTERISTICS
Figure 14. EDGE Spectrum
GSM TEST SIGNAL
T
J
, JUNCTION TEMPERATURE (°C)
D
2
for MTTF in a particular application.
200 kHz
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
400 kHz
Span 2 MHz
190 200
600 kHz
2
210
Freescale Semiconductor
RF Device Data