mrf6s18100n Freescale Semiconductor, Inc, mrf6s18100n Datasheet - Page 7

• Manufacturer Part Number: mrf6s18100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
18
16
14
12
10
12
10
−40
−45
−50
−55
−60
−65
−70
−75
8
8
6
4
2
0
1
1
0
V
I
f = 1960 MHz
DQ
V
I
f = 1960 MHz
EDGE Modulation
V
f = 1960 MHz, EDGE Modulation
DQ
DD
Figure 9. EVM and Drain Efficiency versus
Figure 7. Power Gain and Drain Efficiency
DD
DD
= 900 mA
Figure 11. Spectral Regrowth at 400 kHz
= 28 Vdc
= 700 mA
= 28 Vdc
T
= 28 Vdc, I
C
= −30_C
20
P
versus CW Output Power
P
G
out
out
DQ
ps
P
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) AVG.
versus Output Power
out
= 700 mA
, OUTPUT POWER (WATTS)
Output Power
−30_C
85_C
25_C
40
10
10
TYPICAL CHARACTERISTICS
η
EVM
D
60
T
C
T
= −30_C
C
η
= −30_C
D
25_C
25_C
80
100
85_C
85_C
85_C
25_C
100
100
60
50
40
30
20
10
0
50
40
30
20
10
0
−50
−55
−60
−65
−70
−75
−80
−85
−85
−55
−60
−65
−70
−75
−80
—
5
4
3
2
1
0
1900
0
1930 - 1990 MHz
SR @ 400 kHz
SR @ 600 kHz
Figure 10. Spectral Regrowth at 400 kHz and
V
f = 1960 MHz, EDGE Modulation
DD
1920
V
I
Figure 12. Spectral Regrowth at 600 kHz
DQ
DD
= 28 Vdc, I
= 700 mA
1920
= 28 Vdc
Figure 8. EVM versus Frequency
20
600 kHz versus Frequency
DQ
P
MRF6S18100NR1 MRF6S18100NBR1
44 W Avg.
versus Output Power
out
1940
1940
= 700 mA
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
61 W Avg.
P
f, FREQUENCY (MHz)
out
40
44 W Avg.
20 W Avg.
= 61 W Avg.
1960
1960
20 W Avg.
60
T
1980
C
= −30_C
P
V
I
f = 1960 MHz
EDGE Modulation
DQ
out
DD
1980
44 W Avg.
20 W Avg.
= 700 mA
= 61 W Avg.
= 28 Vdc
80
2000
25_C
85_C
2000
2020
100
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