mrf6s18100n Freescale Semiconductor, Inc, mrf6s18100n Datasheet - Page 12

• Manufacturer Part Number: mrf6s18100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

12
MRF6S18100NR1 MRF6S18100NBR1
6
5
4
3
2
1
1800
V
I
DQ
DD
= 700 mA
= 28 Vdc
Figure 20. EVM versus Frequency
1820
f, FREQUENCY (MHz)
1840
17
16
15
14
13
12
16
15
14
13
Figure 18. Power Gain, Input Return Loss and Drain
Figure 19. Power Gain, Input Return Loss and Drain
1800
1800
Efficiency versus Frequency @ P
Efficiency versus Frequency @ P
G
IRL
η
TYPICAL CHARACTERISTICS
1860
ps
D
1810
1810
1820
P
1820
out
1880
= 60 W Avg.
42 W Avg.
25 W Avg.
1830
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
1830
1900
1840
1840
G
IRL
η
ps
D
1850
1850
10
8
6
4
2
0
out
out
1
1860
1860
V
I
V
I
DQ
—
DQ
DD
= 100 Watts
DD
Figure 21. EVM and Drain Efficiency versus
V
I
f = 1840 MHz
EDGE Modulation
= 40 Watts
DQ
DD
= 900 mA
= 900 mA
1805 - 1880 MHz
= 28 Vdc
= 28 Vdc
= 700 mA
= 28 Vdc
1870
1870
P
1880
1880
out
, OUTPUT POWER (WATTS) AVG.
60
50
40
30
20
10
50
40
30
20
Output Power
0
−10
−20
−10
−20
−30
−40
−30
−40
10
EVM
η
D
Freescale Semiconductor
T
C
= 25_C
RF Device Data
100
50
40
30
20
10
0