mrf6s18100n Freescale Semiconductor, Inc, mrf6s18100n Datasheet - Page 2

• Manufacturer Part Number: mrf6s18100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6S18100NR1 MRF6S18100NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Input Return Loss
P
1. Part internally matched both on input and output.
out
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
@ 1 dB Compression Point
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 330 μAdc)
= 900 mAdc, Measured in Functional Test)
= 3.3 Adc)
= 3.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, P
out
Symbol
V
Rating
V
V
P1dB
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
GSS
IRL
DSS
DSS
g
η
= 100 W, I
3
rss
fs
ps
D
DQ
Min
100
Package Peak Temperature
1.6
1.5
—
—
—
—
—
—
13
47
—
= 900 mA, f = 1930- 1990 MHz
0.24
14.5
260
Typ
110
- 12
2.8
5.3
1.5
49
—
—
—
1B (Minimum)
2
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
500
3.5
10
16
—
—
—
—
—
- 9
1
3
RF Device Data
(continued)
μAdc
μAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
dB
dB
°C
pF
W
%
S