psmn038 NXP Semiconductors, psmn038 Datasheet - Page 7

• Manufacturer Part Number: psmn038
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07897
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
(V)
(S)
40
g
30
20
10
fs
0
4.5
3.5
2.5
1.5
0.5
0
5
4
3
2
1
0
V
-60
DS
DS
> I
= V
D
10
X R
-20
GS
DSon
T
j
20
DS
= 25 ºC
20
150 ºC
I
D
60
30
R
max.
typ.
min
DSon
100
40
03ae01
I
T j ( o C)
D
140
(A)
03aa32
50
Rev. 01 — 16 January 2001
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
(A)
I D
C
10 4
C
(pF)
10 3
10 2
C
oss
iss
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
rss
10 -1
,
,
0
DS
= 5 V
1
PSMN038-100K
1
2
min
© Philips Electronics N.V. 2001. All rights reserved.
3
10
typ
V
V GS (V)
DS
03ae03
4
C
C
C
(V)
max
iss
oss
rss
03aa35
10 2
5
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