psmn038 NXP Semiconductors, psmn038 Datasheet - Page 3

• Manufacturer Part Number: psmn038
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07897
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
=
P der
(%)
120
100
80
60
40
20
----------------------
P
0
tot 25 C
P
0
tot
DM
25
is single pulse
100%
50
10 -1
10 -2
10 2
(A)
10
I
D
1
10 -1
75
R
DSon
P
100
= V
t p
DS
T
125
/ I
D
T sp ( o C)
=
150
t p
T
t
03aa17
1
175
Rev. 01 — 16 January 2001
D.C.
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
10
V
I
der
GS
function of solder point temperature.
(%)
=
I der
5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
10 2
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
25
100%
03ad97
V
50
PSMN038-100K
DS
(V)
75
© Philips Electronics N.V. 2001. All rights reserved.
10 3
100
125
T sp ( o C)
150
03aa25
175
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