psmn038 NXP Semiconductors, psmn038 Datasheet - Page 2

• Manufacturer Part Number: psmn038
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07897
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Quick reference data
Limiting values
Conditions
T
T
T
V
Conditions
T
T
T
T
j
sp
sp
GS
j
sp
sp
sp
sp
sp
Rev. 01 — 16 January 2001
= 25 to 150 C
= 25 to 150 C
= 80 C;
= 80 C;
= 80 C
= 25 C; pulsed; t
= 80 C
= 80 C
= 25 C; pulsed; t
= 10 V; I
Figure 2
Figure 1
D
N-channel enhancement mode field-effect transistor
= 5.2 A; T
p
p
and
10 s
10 s
j
= 25 C
3
PSMN038-100K
© Philips Electronics N.V. 2001. All rights reserved.
Typ
33
Min
55
55
38
Max
100
6.3
3.5
150
Max
100
6.3
50
3.5
+150
+150
3.1
50
20
2 of 13
Unit
V
A
W
m
Unit
V
V
A
A
W
A
A
C
C
C