MBM29PL64LM SPANSION, MBM29PL64LM Datasheet - Page 19

• Manufacturer Part Number: MBM29PL64LM
• Description: Flash Memory 64 M (8M X 8/4M X 16) BIT
• Manufacturer: SPANSION

18
MBM29PL64LM
A
0
1Ah
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
to A
6
DQ
000Ah
003Eh
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0007h
0007h
0000h
0001h
0005h
0004h
0000h
0017h
0002h
0000h
0005h
0000h
0002h
007Fh
0000h
0020h
0000h
0000h
0000h
0001h
0
to DQ
15
90/10
Common Flash Memory Interface Code
Query-unique ASCII string “QRY”
Primary OEM Command Set
(02h = Fujitsu standard)
Address for Primary Extended Table
Alternate OEM Command Set
(00h = not applicable)
Address for Alternate OEM Extended Table
(00h = not applicable)
V
DQ
DQ
V
DQ
DQ
V
Typical timeout per single write 2
Flash Device Interface description
02h :
Max number of byte in multi-byte write = 2
Number of Erase Block Regions within device (02h = Boot)
Erase Block Region 1 Information
Erase Block Region 2 Information
V
Typical timeout for Min size buffer write 2
Typical timeout per individual sector erase 2
Typical timeout for full chip erase 2
Max timeout for write 2
Max timeout for buffer write 2
Max timeout per individual sector erase 2
Max timeout for full chip erase 2
Device Size = 2
CC
CC
PP
PP
7
3
7
3
Min voltage (00h = no V
Max voltage (00h =no V
Min (write/erase)
Max (write/erase)
to DQ
to DQ
to DQ
to DQ
8/
4
0
4
0
: 1 V/bit,
: 100 mV/bit
: 1 V/bit,
: 100 mV/bit
16
N
byte
N
times typical
pp
pp
N
pin)
pin)
times typical
Description
N
N
times typical
N
s
ms
N
N
N
times typical
s
N
ms
(Continued)