MBM29PL64LM SPANSION, MBM29PL64LM Datasheet
MBM29PL64LM
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MBM29PL64LM Summary of contents
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... Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a SPANSION revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with " ...
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... MBM29PL64LM DESCRIPTION The MBM29PL64LM is a 64M-bit, 3.0 V-only Flash memory organized as 8M bytes by 8 bits or 4M words by 16 bits. The MBM29PL64LM is offered in 48-pin, 58-pin TSOP(1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3 erase operations. The devices can also be reprogrammed in standard EPROM programmers. ...
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... Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29PL64LM is programmed by executing the program command sequence. This will invoke the Em- bedded Program Algorithm TM which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin ...
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... Temporary sector group unprotection Temporary sector group unprotection via the RESET pin This feature allows code changes in previously locked sectors • In accordance with CFI (Common Flash Memory Interface Embedded Erase TM and Embedded Program MBM29PL64LM TM are trademarks of Advanced Micro Devices, Inc. 90/10 3 ...
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... MBM29PL64LM PIN ASSIGNMENTS RESET A 21 WP/ACC RY/ N.C. N. RESET A 21 WP/ACC RY/ ...
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... RY/BY WP/ACC N.C. N. N.C. N.C. N.C. N.C. CC N.C. (BGA-80P-M01) MBM29PL64LM FBGA (Top view N.C. V N.C. N.C. N.C. CCQ BYTE N. ...
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... WP/ACC RESET BYTE RY/ CCQ V SS N.C. 6 90/10 MBM29PL64LM Pin Configuration Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Hardware Write Protection/Program Acceleration Hardware Reset Pin/Temporary Sector Group Unprotection Select 8-bit or 16-bit mode Ready/Busy Output Device Power Supply Ouput Voltage ...
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... CCQ WE State Control RESET / WP ACC Command BYTE Register LOGIC SYMBOL MBM29PL64LM Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic - Y Decoder STB Timer for Address / Program Erase Latch - X Decoder ...
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... MBM29PL64LM DEVICE BUS OPERATION MBM29PL64LM User Bus Operations (Word Mode : BYTE = V Operation Standby Autoselect Manufacture Code* 1 Autoselect Device Code* 1 Read Output Disable Write (Program/Erase) Enable Sector Group Protection* 2 Temporary Sector Group Unprotection Reset (Hardware) Sector Write Protection* 3 Legend : ...
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... MBM29PL64LM User Bus Operations (Byte Mode : BYTE = V Operation Standby Autoselect Manufacture Code* 1 Autoselect Device Code* 1 Read Output Disable Write (Erase) Enable Sector Group Protection* 2 Temporary Sector Group Unprotection Reset (Hardware) 3 Sector Write Protection* Legend : Hi-Z = High Manufacturer and device codes may also be accessed via a command register write sequence ...
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... MBM29PL64LM MBM29PL64LM Standard Command Definitions* Bus Command Write Cycles Sequence Req'd Word/ Reset Byte Word 2 Reset* 3 Byte Word Autoselect 3 (Device ID) Byte Program 4 Word Word Chip Erase 6 Byte Word Sector Erase 6 Byte Program/Erase Suspend Program/Erase Resume Word Set to Fast Mode* ...
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... X = “H” or “L” for all address commands except for Program Address (PA Sector Address (SA) and Sector Group Address (SGA). Bus operations are defined in “MBM29PL64LM User Bus Operations (Word Mode : BYTE = V and “MBM29PL64LM User Bus Operations (Byte Mode : BYTE = Address of the memory location to be read. ...
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... MBM29PL64LM Sector Group Protection Verify Autoselect Codes Type Manufacturer’s Code Word Device Code Byte Word Byte 2 Extended Device Code* Word Byte Sector Group Protection for Byte mode Word mode, a read cycle at address 01h ( at Byte mode, 02h ) outputs device code. When 227Eh ( at Byte mode, 7Eh ) is output, it indicates that reading two additional codes, called Extended Device Codes, will be required ...
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... Sector Address Table (MBM29PL64LM) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...
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... MBM29PL64LM Sector SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 ...
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... SA91 SA92 SA93 SA94 MBM29PL64LM Sector size ( 8) A (Kbytes Address Range Kwords) 1 64/32 3F0000h to 3FFFFFh 0 64/32 400000h to 40FFFFh 1 64/32 410000h to 41FFFFh 0 64/32 420000h to 42FFFFh 1 64/32 430000h to 43FFFFh 0 64/32 440000h to 44FFFFh 1 64/32 450000h to 45FFFFh 0 64/32 ...
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... MBM29PL64LM (Continued) Sector SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 ...
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... Sector Group Address Table (MBM29PL64LM) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 ...
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... MBM29PL64LM 10h 0051h 11h 0052h 12h 0059h 13h 0002h 14h 0000h 15h 0040h 16h 0000h 17h 0000h 18h 0000h 19h 0000h 1Ah 0000h 1Bh 0027h 1Ch 0036h 1Dh 0000h 1Eh 0000h 1Fh 0007h 20h 0007h 21h ...
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... MBM29PL64LM Description Erase Block Region 3 Information Erase Block Region 4 Information Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock Required Erase Suspend (02h = To Read & Write) ...
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... To activate this mode, the programming equipment must force V then be sequenced from the devices outputs by toggling and A . See “MBM29PL64LM User Bus Operations (Word Mode : BYTE = VIH)” and “MBM29PL64LM User Bus Operations (Byte Mode : BYTE = VIL)” in DEVICE BUS OPERATION. ...
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... Group Address Table (MBM29PL64LM)” in DEVICE BUS OPERATION defines the sector group address for each of the twenty-four (24) individual group sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group addresses must be held constant during the WE pulse. See “ ...
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... MBM29PL64LM Temporary Sector Group Unprotection This feature allows temporary unprotection of previously protected sector groups of the devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (V this mode, formerly protected sector groups can be programmed or erased by selecting the sector group ad- dresses ...
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... COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. “MBM29PL64LM Standard Command Definitions” in command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the Program Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is in progress ...
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... MBM29PL64LM Programming is allowed in any address sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting may result in either failure condition or an apparent success according to the data polling algorithm. But a read from Reset mode will show that the data is still “0”. Only erase operations can convert “ ...
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... Write data other than the “Program Buffer to Flash" command after the specified number of “data load” cycles. A “Write-to-Buffer-Abort Reset” command sequence must be written to the device to return to read mode. (See “MBM29PL64LM Standard Command Definitions” in DEVICE BUS OPERATION for details on this command sequence.) Chip Erase Chip erase is a six bus cycle operation. It begins two “ ...
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... MBM29PL64LM section), at which the devices return to the read mode. Data polling and Toggle Bit must be performed at an address within any of the sectors being erased. Erase Suspend/Resume The Erase Suspend command allows the user to interrupt Sector Erase operation and then perform read to a sector not being erased ...
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... HiddenROM region. This mode of operation continues until the system issues the Exit HiddenROM command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the address. If you request Fujitsu to program the ESN in the device, please contact a Fujitsu representative for more infor- mation. MBM29PL64LM ( should be set and write a command (40h) ...
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... MBM29PL64LM (2) HiddenROM Entry Command The device has a HiddenROM area with One Time Protect function. This area is to enter the security code and to unable the change of the code once set. Programming is allowed in this area until it is protected. However, once it gets protected impossible to unprotect. Therefore, extreme caution is required. ...
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... The Data Polling algorithm detailed in “Data Polling Algorithm” in FLOW CHART should be used for Write- Buffer-Programming operations. Note that DQ DQ data for the LAST LOADED WRITE-BUFFER ADDRESS location. 7 MBM29PL64LM is address sensitive address from an erasing sector is 2 bit will toggle. However DQ will not toggle if an address from a non-erasing ...
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... MBM29PL64LM DQ 7 Data Polling The devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read devices will produce reverse data last written to DQ device will produce true data last written to DQ device will produce a “ ...
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... Data Polling is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29PL64LM User Bus Operations (Word Mode : BYTE = V )” ...
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... MBM29PL64LM Reading Toggle Bits Whenever the system initially begins reading Toggle bit status, it must read DQ to determine whether a Toggle bit is toggling. Typically a system would note and store the value of the Toggle bit after the first read. After the second read, the system would compare the new value of the Toggle bit with the first ...
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... Device user is able to protect each sector group individually to store and protect data. Protection circuit voids both write and erase commands that are addressed to protected sectors. Any commands to write or erase addressed to protected sector are ignored . MBM29PL64LM /A pin becomes the lowest address bit, and ...
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... CC CCQ * supply voltage is only for MBM29PL64LMxxPCN : 56 pin TSOP CCQ WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges ...
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... MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2.0 V Maximum Undershoot Waveform Maximum Overshoot Waveform 1 +14.0 V +12 +0 Note: This waveform is applied for A MBM29PL64LM OE, RESET, and Maximum Overshoot Waveform 2 90/10 35 ...
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... MBM29PL64LM ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current CC (Read ) * Active Current CC (Intra-Page Read ) * 2 V Active Current CC (Program / Erase Standby Current * Reset Current * Automatic Sleep Current * 4 CC ...
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... DC operating current and the frequency dependent component Maximum I values are tested with only for MBM29PL64LMxxPCN : 56 pin TSOP . CCQ * active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress Automatic sleep mode enables the low power mode when address remain stable for t ...
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... MBM29PL64LM 2. AC Characteristics • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Page Read Cycle Time Page Address to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Read Output Enable Hold Time Toggle and Data Polling ...
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... Programming Time Word Sector Erase Operation * 1 V Setup Time CC Recovery Time From RY/BY Erase/Program Valid to RY/BY Delay Rise Time Rise Time ACC 2 Voltage Transition Time * MBM29PL64LM Symbol 90 JEDEC Standard Min Typ Max AVAV AVWL AS — ASO ...
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... Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : This does not include the preprogramming time This timing is for Sector Group Protection operation This timing is for Accelerated Program operation. MBM29PL64LM Symbol 90 JEDEC Standard Min Typ Max — ...
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... FBGA PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Reset pin and WP/ACC Pin Capacitance Notes : Test conditions T = 25° 1.0 MHz A DQ /A- pin capacitance is stipulated by output capacitance MBM29PL64LM Limits Unit Min Typ Max — — 100 3000 µs — 23.5 — ...
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... MBM29PL64LM TIMING DIAGRAM • Key to Switching Waveforms Address Data 42 90/10 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” Changing Any Change State ...
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... OEH WE High-Z Data Page Read Operation Timing Diagram Address RESET High-Z Data Hardware Reset/Read Operation Timing Diagram MBM29PL64LM Address Valid PRC t ACC PACC PACC ...
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... MBM29PL64LM 3rd Bus Cycle 555h Address GHWL A0h Data Notes : PA is address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. ...
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... D is the output of the data written to the device. OUT Figure indicates the last two bus cycles out of four bus cycle sequence. Alternate CE Controlled Program Operation Timing Diagram MBM29PL64LM Data Polling ...
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... MBM29PL64LM 555h Address GHWL WE t Data RY/BY t VCS the sector address for Sector Erase. Address = 555h (Word), AAAh (Byte) for Chip Erase. Chip/Sector Erase Operation Timing Diagram 46 90/10 2AAh 555h 555h WPH t DS ...
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... XXXh Address SPD B0h Data RY/BY Erase Suspend Operation Timing Diagram MBM29PL64LM 90/10 47 ...
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... MBM29PL64LM Address Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation.) 7 Note : When checking Hardware Sequence Flags program operations, it should be checked 4 s after issuing program command. Data Polling during Embedded Algorithm Operation Timing Diagram ...
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... Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with read from the erase-suspended sector. 2 MBM29PL64LM AHT ASO AHT AS t CEPH t OEPH t OEH t CE Toggle Toggle Data Data Enter Erase Suspend Program ...
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... MBM29PL64LM CE WE RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram CE, OE RESET RESET Timing Diagram (Not during Embedded Algorithms) 50 90/10 Rising edge of the last WE signal READY Entire programming or erase operations t BUSY t RH ...
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... WE RESET t RP RY/BY t READY RESET Timing Diagram (During Embedded Algorithms) MBM29PL64LM 90/ ...
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... MBM29PL64LM SGAX VLHT VLHT WE CE Data t VCS V CC SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected 52 90/10 t VLHT t WPP ...
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... V CC VCS VIDR V ID RESET VLHT RY/BY Temporary Sector Group Unprotection Timing Diagram MBM29PL64LM Program or Erase Command Sequence Unprotection period 90/10 t VLHT VLHT 53 ...
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... MBM29PL64LM VCS RESET t VLHT t VIDR Add Data SGAX: Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window = 250 s (Min) Extended Sector Group Protection Timing Diagram 54 90/10 SGAX TIME-OUT 60h ...
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... VACCR t VCS V ACC ACC VLHT Accelerated Program Timing Diagram MBM29PL64LM t VLHT t VLHT Program Command Sequence Acceleration period 90/10 55 ...
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... MBM29PL64LM FLOW CHART EMBEDDED ALGORITHMS Increment Address Note : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( 56 90/10 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555h/AAh ...
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... Chip Erase Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( Embedded Erase MBM29PL64LM Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress Data ...
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... MBM29PL64LM * : DQ is rechecked even 90/10 Start m Wait 4 s after issuing Program Command Read Byte ( Valid address for programming 7 0 Addr Any of the sector addresses within Yes DQ = Data Any of the sector addresses within Yes Read Byte ( ...
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... Read Toggle bit twice to determine whether it is toggling Recheck Toggle bit because it may stop toggling as DQ MBM29PL64LM Start m Wait 4 s after issuing Program Command *1 Read Addr. "H" or "L" *1 Read Addr. "H" or "L" ...
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... MBM29PL64LM Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed * : Byte ( 8 ) mode 90/10 Start Setup Sector Group Addr PLSCNT RESET Activate WE Pulse Time out 100 s ...
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... All protected sector groups are unprotected All previously protected sector groups are protected. Temporary Sector Group Unprotection Algorithm MBM29PL64LM Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Group Unprotection Completed *2 90/10 61 ...
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... MBM29PL64LM Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 62 90/10 Start RESET = V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group Protection Write XXXh/60h PLSCNT = 1 To Protect Sector Group ...
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... FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( Embedded Program MBM29PL64LM Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ? Yes Programming Completed XXXh/90h XXXh/F0h 8 ) mode. ...
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... MBM29PL64LM ORDERING INFORMATION Part No. MBM29PL64LM90TN MBM29PL64LM10TN MBM29PL64LM90PCN MBM29PL64LM10PCN MBM29PL64LM90PBT MBM29PL64LM10PBT MBM29PL64LM DEVICE NUMBER/DESCRIPTION 64 Mega-bit (8M Boot Sector 3.0 V-only Read, Program, and Erase 64 90/10 Package Access Time (ns) 48-pin, plastic TSOP (1) (FPT-48P-M19) (Normal Bend) 56-pin, plastic TSOP (1) (FPT-56P-M01) (Normal Bend) 80-ball, plastic FBGA (BGA-80P-M01 ...
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... Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX 24 20.00 ± 0.20 (.787 ± .008) * 18.40 ± 0.20 (.724 ± .008) "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 C MBM29PL64LM Resin protrusion and gate protrusion are +0.15(.006)Max(each side). 48 Details of "A" part 0~8 ˚ 0.60 ± 0.15 (.024 ± .006 12.00 (.472 ± 0.50(.020) +0.03 0.17 – 0.08 + ...
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... MBM29PL64LM 56-pin plastic TSOP(1) (FPT-56P-M01) LEAD No. 1 INDEX 28 20.00±0.20(.787±.008 18.40±0.10(.724±.004) 0.08(.003) 2002 FUJITSU LIMITED F56001S-c-4 90/10 Note Resn protrusion. (Each side : +0.15 (.006) Max). Note These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. ...
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... FBGA (BGA-80P-M01) 11.00±0.10(.433±.004) INDEX AREA 2003 FUJITSU LIMITED B80001S-c-1-1 C MBM29PL64LM +0.12 1.08 –0.13 (Mounting height) +.005 .043 –.005 0.38±0.10 (Stand off) (.015±.004) A 7.00±0.10 (.276±.004) 0.10(.004 80-ø0.45±0.05 (80-ø.018±.002) Dimensions in mm (inches) Note : The values in parentheses are reference values ...
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... MBM29PL64LM 90/10 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...