MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 27

• Manufacturer Part Number: MBM29DS163TE
• Description: (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
• Manufacturer: Fujitsu Media Devices

Sector Erase
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the device will automatically program and verify the entire memory for an all zero
data pattern prior to electrical erase (Preprogram function) . The system is not required to provide any controls
or timings during these operations.
The system can determine the status of the erase operation by using DQ
RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command
sequence and terminates when the data on DQ
returns to read the mode.
Chip Erase Time : Sector Erase Time
“Embedded Erase
command strings and bus operations.
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever
happens later, while the command (Data
After time-out of “t
Multiple sectors are erased concurrently by writing the six bus cycle operations on “MBM29DS163TE/BE Com-
mand Definitions” in “
command to addresses in other sectors desired to be concurrently erased. The time between writes must be
less than “t
that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-
enabled after the last Sector Erase command is written. A time-out of “t
WE whichever happens first will initiate the execution of the Sector Erase command (s) . If another falling edge
of CE or WE, whichever happens first occurs within the “t
to determine if the sector erase timer window is still open, see section DQ
other than Sector Erase or Erase Suspend during this time-out period will reset the device to the read mode,
ignoring the previous command string. Resetting the device once execution has begun will corrupt the data in
the sector. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write
Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any
sequence and with any number of sectors (0 to 70) .
Sector erase does not require the user to program the device prior to erase. The device automatically programs
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function) . When erasing
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
RY/BY.
The sector erase begins after the “t
the last sector erase command pulse and terminates when the data on DQ
section.) at which time the device return to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time : [Sector Erase Time Sector Program Time (Preprogramming) ] Number of Sector
In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not performe.
“Embedded Erase
command strings and bus operations.
TOW
” otherwise that command will not be accepted and erasure does not start. It is recommended
TOW
TM
TM
Algorithm” in “ FLOW CHART” illustrates the Embedded Erase
” from the rising edge of the last sector erase command, the sector erase operation begins.
Algorithm” in “ FLOW CHART” illustrates the Embedded Erase
USER BUS OPERATION”. This sequence is followed with writes of the Sector Erase
Erase
TOW
” time out from the rising edge of CE or WE whichever happens first for
All sectors
30h) is latched on the rising edge of CE or WE which happens first.
7
is “1” (See Write Operation Status section.) at which the device
Chip Program Time (Preprogramming)
TOW
” time-out window the timer is reset. (Monitor DQ
MBM29DS163TE/BE
TOW
3
7
7
, Sector Erase Timer.) Any command
(Data Polling) , DQ
(Data Polling) , DQ
7
” from the rising edge of last CE or
is “1” (See Write Operation Status
TM
TM
Algorithm using typical
Algorithm using typical
6
6
(Toggle Bit) , or
(Toggle Bit) , or
10
3
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