MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 19

• Manufacturer Part Number: MBM29DS163TE
• Description: (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
• Manufacturer: Fujitsu Media Devices

Query-unique ASCII string “QRY”
Primary OEM Command Set
2h : AMD/FJ standard type
Address for Primary Extended Table
Alternate OEM Command Set (00h
Address for Alternate OEM Extended Table
V
DQ
V
DQ
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max timeout for byte/word write 2
Max timeout for buffer write 2
Max timeout per individual block erase 2
Max timeout for full chip erase 2
Device Size
Flash Device Interface description
Max number of byte in
multi-byte write
Number of Erase Block Regions within device
Erase Block Region 1 Information
Erase Block Region 2 Information
CC
CC
PP
PP
7
7
Min voltage
Max voltage
Min (write/erase)
Max (write/erase)
to DQ
to DQ
4
4
: V, DQ
: V, DQ
2
N
byte
2
N
3
3
to DQ
to DQ
Description
0
0
: 100 mV
: 100 mV
N
times typical
Common Flash Memory Interface Code Table
N
N
times typical
N
times typical
ms
not applicable)
N
N
times typical
N
N
s
ms
s
MBM29DS163TE/BE
A
6
1Ah
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
to A
0
DQ
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0018h
0022h
0000h
0000h
000Ah
0004h
0000h
0002h
0000h
0000h
0000h
0007h
0000h
0020h
0000h
001Eh
0000h
0000h
0001h
0004h
0000h
0000h
0005h
0000h
0015h
0002h
15
to DQ
(Continued)
0
10
19