MBM29DL34TF Fujitsu Media Devices, MBM29DL34TF Datasheet - Page 33

• Manufacturer Part Number: MBM29DL34TF
• Description: (MBM29DL34BF/TF) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
• Manufacturer: Fujitsu Media Devices

13. Write Operation Status
*1: Successive reads from the erasing or erase-suspend sector will cause DQ
*2: Reading from non-erase suspend sector address will indicate logic “1” at the DQ
In Progress
Exceeded
Time Limits
because it is the same as the extension sector group protect in the past, except that it is in the HiddenROM
mode and does not apply high voltage to the RESET pin. Please refer to “7. Extended Command (3) Extended
Sector Group Protection” for details of extension sector group protect setting.
The other method is to apply high voltage (V
and (A
protect circuit, apply high voltage (V
in the HiddenROM area, and read. When “1” appears on DQ
on DQ
method because other than the HiddenROM mode, it is the same as the sector group protect previously men-
tioned. Refer to “8. Secor Group Protection” in
protect setting.
Take note that other sector groups will be affected if an address other than those for the HiddenROM area is
selected for the sector group address, so please be careful. Pay close attention that once it is protected, protection
CANNOT BE CANCELLED.
Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank
for the current mode operation. The read operation from the bank that does not operate Embedded Algorithm
returns a data of memory cell. These bits offer a method for determining whether a Embedded Algorithm is
completed properly. The information on DQ
secutively read, then the DQ
is consecutively read. This allows the user to determine which sectors are erasing.
The status flag is not output from bank (non-busy bank) not executing Embedded Algorithm. For example, there
is bank (busy bank) which is now executing Embedded Algorithm. When the read sequence is [1] <busy bank>,
[2] <non-busy bank>, [3] <busy bank>, the DQ
memory cell is outputted. In the erase-suspend read mode with the same read sequence, DQ
in the [1] and [3].
In the erase suspend read mode, DQ
outputted.
0
6
, A
if it is not protected. Apply write pulse again. The same command sequence could be used for the above
3
, A
Embedded Program Algorithm
Embedded Erase Algorithm
Program
Suspended
Mode
Erase
Suspended
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspended
Mode
2
, A
1
, A
0
)
Program Suspend Read
Program Suspend Read
Erase Suspend Read
Erase Suspend Read
Erase Suspend Program
Erase Suspend Program
Status
(Non-Program Suspended Sector)
(Program Suspended Sector)
(Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Non-Erase Suspended Sector)
(0, 0, 0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the
2
bit will toggle. However, DQ
ID
Hardware Sequence Flags Table
) to A
2
is toggled in the [1] and [3]. In case of [2], the data of memory cell is
9
, specify (A
2
ID
is address sensitive. If an address from an erasing sector is con-
) to A
6
is toggling in the case of [1] and [3]. In case of [2], the data of
FUNCTIONAL DESCRIPTION for details of the sector group
9
and OE, set the sector address in the HiddenROM area
6
, A
2
will not toggle if an address from a non-erasing sector
3
, A
0
2
, the protect setting is completed. “0” will appear
Data
Data
Data
, A
DQ
DQ
DQ
DQ
DQ
0
1
0
1
, A
7
7
7
7
7
MBM29DL34TF/BF
0
)
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data
Data
Data
DQ
(0, 0, 0, 1, 0) and the sector address
1
2
to toggle.
6
2
bit.
Data
Data
Data
DQ
0
0
0
0
1
1
1
5
6
Data
Data
Data
will not be toggled
DQ
0
1
0
0
0
1
0
3
Toggle *
Toggle *
Data
Data
Data
DQ
N/A
N/A
1 *
1
1
2
2
70
1
1
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