S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet - Page 93

• Manufacturer Part Number: S29GL256N10TFI023
• Description: MirrorBit Flash Family
• Manufacturer: ETC

AC Characteristics
Erase and Program Operations–S29GL512N Only
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with V
May 13, 2004 27631A4
t
t
JEDEC
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
DVWH
WHDX
WHEH
WLWH
WLAX
GHWL
WHDL
AVWL
AVAV
ELWL
Parameter
AC specifications for 100 ns and 110 ns speed options are tested with V
t
t
WHWH1
t
WHWH2
t
Std.
t
t
t
GHWL
t
t
t
OEPH
t
t
t
t
t
t
t
WPH
ASO
AHT
VHH
VCS
WC
DH
WP
AS
AH
DS
CS
CH
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle
bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Operation (Notes 2, 4)
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Program Operation (Note 2)
Accelerated Programming
Operation (Note 2)
Sector Erase Operation (Note 2)
V
V
HH
CC
Setup Time (Note 1)
Rise and Fall Time (Note 1)
A d v a n c e
S29GLxxxN MirrorBitTM Flash Family
I n f o r m a t i o n
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
90
90
IO
= 1.8 V and V
100
100
Speed Options
13.5
240
250
1.0
15
45
20
54
45
35
30
15
60
50
0
0
0
0
0
0
CC
100
100
= 3.0 V.
IO
110
= V
110
CC
= 3 V.
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
µs
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