S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet - Page 55
S29GL256N10TFI023
Manufacturer Part Number
S29GL256N10TFI023
Description
MirrorBit Flash Family
Manufacturer
ETC
Datasheet
1.S29GL256N10TFI023.pdf
(110 pages)
- Current page: 55 of 110
- Download datasheet (3Mb)
May 13, 2004 27631A4
Addresses
Addresses
(x16)
(x16)
1Dh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Ch
1Eh
20h
21h
22h
23h
24h
25h
26h
1Fh
Addresses
Addresses
(x8)
(x8)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
A d v a n c e
Table 8. CFI Query Identification String
000Ah
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0007h
0007h
0000h
0001h
0005h
0004h
0000h
Data
Data
Table 9. System Interface String
S29GLxxxN MirrorBitTM Flash Family
I n f o r m a t i o n
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Description
Description
PP
PP
N
pin present)
times typical
pin present)
N
times typical (00h = not supported)
N
N
times typical
ms (00h = not supported)
N
N
times typical
N
µ
N
ms
s (00h = not supported)
µs
55
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