S29GL512N SPANSION, S29GL512N Datasheet - Page 89

• Manufacturer Part Number: S29GL512N
• Description: Page Mode Flash Memory
• Manufacturer: SPANSION

Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
S29GL-N_00_B3 October 13, 2006
Parameter
Sector Erase Time
Chip Erase Time
Total Write Buffer
Programming Time
(Note 3)
Total Accelerated Effective
Write Buffer Programming
Time
Chip Program Time
(Note 4)
pattern.
words program faster than the maximum program times listed.
command. See
Parameter Symbol
(Note 3)
C
C
C
OUT
IN2
IN
Table 12 on page 63
A
= 25°C, f = 1.0 MHz.
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
S29GL128N
S29GL256N
S29GL512N
S29GL128N
S29GL256N
S29GL512N
D a t a
and
CC
S29GL-N MirrorBit™ Flash Family
Table 14 on page 65
= 3.0 V, 100,000 cycles.
S h e e t
(Note 1)
128
256
240
200
123
246
492
Typ
0.5
64
V
V
V
OUT
IN
IN
= 0
= 0
= 0
for further information on command definitions.
Test Setup
(Note 2)
1024
Max
256
512
3.5
TSOP
TSOP
TSOP
BGA
BGA
BGA
Unit
sec
sec
sec
µs
µs
CC
, 10,000 cycles, checkerboard
Typ
4.2
8.5
5.4
7.5
3.9
6
Excludes system level
programming prior to
overhead
erasure
Excludes 00h
Comments
Max
7.5
5.0
6.5
4.7
12
9
(Note 5)
(Note 6)
Unit
pF
pF
pF
pF
pF
pF
87