S29GL512N SPANSION, S29GL512N Datasheet - Page 49

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S29GL512N

Manufacturer Part Number
S29GL512N
Description
Page Mode Flash Memory
Manufacturer
SPANSION
Datasheet

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S29GL-N_00_B3 October 13, 2006
Addresses (x16)
1Dh
1Bh
1Ch
1Eh
20h
21h
22h
23h
24h
25h
26h
1Fh
Addresses (x8)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
D a t a
000Ah
0027h
0036h
0000h
0000h
0007h
0007h
0000h
0003h
0005h
0004h
0000h
Data
Table 9. System Interface String
S29GL-N MirrorBit™ Flash Family
S h e e t
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
PP
Description
PP
N
pin present)
times typical
pin present)
N
times typical (00h = not supported)
N
N
times typical
ms (00h = not supported)
N
N
times typical
N
µ
N
ms
s (00h = not supported)
µs
47

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