DBT139-600 DnI, DBT139-600 Datasheet
DBT139-600
Related parts for DBT139-600
DBT139-600 Summary of contents
Page 1
... Sine wave Hz,Gate Open °C C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms =36 °C, Pulse width ≤ 1.0us T C Over any 20ms period tp = 20us 20us, T copyright@ D&I Semiconductor Co., Ltd., All rights reserved. DBT139-600 2.T2 ○ 600V DRM ▼ ▲ T(RMS) ○ 3.Gate I = 155 A TSM ○ ...
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... DBT139-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage Ⅰ GT1 - Ⅱ I GT1 Gate Trigger Current - I Ⅲ GT3 + I IV GT3 + V Ⅰ GT1 - Ⅱ V GT1 Gate Trigger Voltage - V Ⅲ GT3 + V IV GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off-State ...
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... θ = 180 o θ = 150 o θ = 120 o θ θ θ DBT139-600 Fig 2. On-State Voltage 125 0.5 1.0 1.5 2.0 2.5 On-State Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature 130 ...
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... DBT139-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 -50 0 Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ ● ● Test Procedure Ⅰ 4 GT1 _ I GT1 _ I GT3 50 100 150 o C] 10Ω ▼ ▲ ● ● ...
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... DBT139-600 Inch Min. Typ. Max. 0.382 0.398 0.248 0.264 0.354 0.373 0.504 0.524 0.047 0.055 0.067 0.098 0.118 0.134 0.049 0.055 0.094 0.106 0.197 0.203 0.087 0.102 0.049 0.061 0.018 0.024 0.024 0.039 0.142 φ ...