DBT134-800 DnI, DBT134-800 Datasheet
DBT134-800
Related parts for DBT134-800
DBT134-800 Summary of contents
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... One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp= 10ms = 104 °C, Pulse width ≤ 1.0us T C Over any 20ms period tp = 20us, T =125° 20us, T =125°C J copyright @ D&I Semiconductor Co., Ltd., All rights reserved. DBT134 - 800 2.T2 ○ 800V DRM T(RMS) ○ 3.Gate TSM ○ ...
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... DBT134 - 800 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage Ⅰ GT1 - Ⅱ I GT1 Gate Trigger Current - I Ⅲ GT3 + Ⅳ I GT3 + V Ⅰ GT1 - Ⅱ V GT1 Gate Trigger Voltage - V Ⅲ GT3 + Ⅳ V GT3 V Non-Trigger Gate Voltage ...
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... DBT134 - 800 Fig 2. On-State Voltage 125 0.5 1.0 1.5 2.0 On-State Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature θ π π ...
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... DBT134 - 800 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 -50 0 Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4 GT1 I - GT1 GT3 + I GT3 10 50 100 150 o C] 10Ω 10Ω ▼ ▲ ...
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... B C 7/7 mm Min. Typ. Max. 7.5 7.9 10.8 11.2 14.2 14.7 2.7 2.9 3.8 2.5 1.2 1.5 2.3 4.6 0.48 0.62 0.7 0.86 1.4 3 φ DBT134 - 800 Inch Min. Typ. Max. 0.295 0.311 0.425 0.441 0.559 0.579 0.106 0.114 0.150 0.098 0.047 0.059 0.091 0.181 0.019 0.024 0.028 0.034 0.055 0.126 Gate ...