DFB30N06 DnI, DFB30N06 Datasheet
DFB30N06
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DFB30N06 Summary of contents
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... Thermal Resistance, Case to Sink θCS R Thermal Resistance, Junction-to-Ambient θJA May, 2006, Rev. 0. =10V GS 1.Gate Parameter ° °C) = 100 °C) C Parameter Min Copyright@ D&I Semiconductor Co., Ltd., All rights reserved. DFB30N06 2.Drain BV = 60V DSS R = 0.04 ohm DS(ON 30A D 3.Source TO-263 2 (D2-Pak Value Units 21.2 ...
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... DFB30N06 Electrical Characteristics Symbol Off Characteristics BV Drain-Source Breakdown Voltage DSS Δ Breakdown Voltage Temperature DSS coefficient Δ Zero Gate Voltage Drain Current DSS Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse On Characteristics V Gate Threshold Voltage GS(th) Static Drain-Source On-state Resis- R DS(ON) tance ...
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... oss rss gd Notes : ※ f=1MHz DFB30N06 Fig 2. Transfer Characteristics 175 -55 C Notes : ※ 25V DS 2. 250µ s Pulse Test Gate-Source Voltage [V] GS Fig 4 ...
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... DFB30N06 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Maximum Safe Operating Area 3 10 Operation in This Area is Limited Drain-Source Voltage [V] DS 4/7 ※ Notes : 250 µ 100 ...
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... R G 10V 5 Same Type as DUT 300nF DUT (0.5 rated DUT DSS DUT DFB30N06 Charge DS 90% 10 d(on) r d(off off BV 1 DSS ...
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... DFB30N06 Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) 6/7 DUT + Driver R G Same Type as DUT V GS • dv/dt controlled by R • I controlled by pulse period S Gate Pulse Width ...
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... DFB30N06 ...