MCK100-6A DnI, MCK100-6A Datasheet

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MCK100-6A

Manufacturer Part Number
MCK100-6A
Description
Standard Gate SCR
Manufacturer
DnI
Datasheet
www.DataSheet4U.com
Sensitive Gate
Silicon Controlled -
Rectifiers
Absolute Maximum Ratings
Features
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
April, 2005. Rev.0
Symbol
Repetitive Peak Off-State Voltage : 400V
R.M.S On-State Current ( I
Low On-State Voltage (1.2V(Typ.)@ I
Available with tape & reel
I
P
V
T(RMS)
V
I
T
I
I
P
T(AV)
G(AV)
FGM
TSM
RGM
DRM
I
T
STG
GM
2
J
t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Parameter
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
T(RMS)
= 0.8 A )
( T
J
TM
= 25°C unless otherwise specified )
)
1.Cathode
Symbol
half sine wave : T
180° Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
T
T
T
T
sine wave,50 to 60Hz,gate open
A
A
A
A
= 25 °C, pulse width ≤ 1.0
= 25 °C, t = 8.3ms
= 25 °C, pulse width ≤ 1.0
= 25 °C, pulse width ≤ 1.0
Condition
2. Anode
3.Gate
C
= 112 °C
SOT- 89
MCK100-6
I
BV
I
T(RMS)
TSM
- 40 ~ 125
- 40 ~ 150
1
Ratings
0.415
DRM
400
0.5
0.8
0.1
5.0
10
2
2
1
= 10 A
= 0.8 A
= 600V
3
Units
A
°C
°C
W
W
V
A
A
A
A
V
2
s
1/5

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MCK100-6A Summary of contents

Page 1

... ° 8.3ms °C, pulse width ≤ 1 °C, pulse width ≤ 1 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. MCK100-6 2. Anode ○ 600V DRM I = 0.8 A T(RMS ○ TSM 3.Gate ○ ...

Page 2

... MCK100-6 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State dv/dt Voltage Critical Rate of Rise On-State di/dt Current I Holding Current H R Thermal Impedance ...

Page 3

... Junction Temperature[ P (2W (0.1W) G(AV) (0.2V 2.0 2.5 3.0 3.5 4.0 50 100 150 o C] MCK100-6 Fig 2. Maximum Case Temperature 160 140 θ = 180 120 100 80 π π θ ° 20 θ : Conduc t ion Angl e 0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] Fig 4. Thermal Response 2 10 ...

Page 4

... MCK100-6 Fig 7. Typical Holding Current 10 1 0.1 -50 0 Junction Temperature[ 4/5 50 100 150 o C] Fig 8. Power Dissipation 0.8 0.7 θ = 120 o θ 0.6 o θ θ 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] o θ = 180 o 0.5 0.6 ...

Page 5

... Min. Typ. Max. 1.40 1.60 0.36 0.56 0.32 0.52 0.35 0.44 0.35 0.44 4.40 4.60 1.40 1.80 2.30 2.60 1.50 2.90 3.10 3.94 4.25 0.90 1.10 0.25 MCK100-6 Inch Min. Typ. Max. 0.055 0.063 0.014 0.022 0.013 0.020 0.014 0.017 0.014 0.017 0.173 0.181 0.055 0.071 0.091 0.102 0.060 0.114 0.122 0.155 0.167 0.035 0.043 0.010 Cathode 2. Anode 3. Gate ...

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