BB601M Hitachi, BB601M Datasheet - Page 8

• Manufacturer Part Number: BB601M
• Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• Manufacturer: Hitachi

BB601M
8
20
15
10
5
0
5
4
3
2
1
10
1
Gate2 to Source Voltage V
Drain Current vs. Gate Resistance
V
V
DS
G2S
Gate Resistance R
Gate2 to Source Voltage
= V
= 4 V
20
G1
Noise Figure vs.
2
= 5 V
V
R
f = 900 MHz
DS
G
3
50
G
= 47 k
= 5 V
G2S
(k
)
(V)
100
4
25
20
15
10
4
3
2
1
0
5
0
0
1
Gate2 to Source Voltage V
Gate2 to Source Voltage V
V
R
f = 1 MHz
DS
G
= 47 k
Gate2 to Source Voltage
= 5 V
Gate2 to Source Voltage
Input Capacitance vs.
1
2
Power Gain vs.
2
V
R
f = 900 MHz
3
DS
G
3
G2S
= 47 k
G2S
= 5 V
(V)
(V)
4
4