BB601M Hitachi, BB601M Datasheet

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BB601M

Manufacturer Part Number
BB601M
Description
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer
Hitachi
Datasheet
Features
Outline
Notes: 1. Marking is “AT–”.
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
PG = 21.5 dB typ. at f = 900 MHz
Low noise;
NF = 1.85 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143mod)
2. BB601M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
MPAK-4R
UHF RF Amplifier
BB601M
4
3
1
2
1. Source
2. Drain
3. Gate2
4. Gate1
ADE-208-702C (Z)
4th. Edition
Nov. 1998

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BB601M Summary of contents

Page 1

... Low noise 1.85 dB typ 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is “AT–”. 2. BB601M is individual type number of HITACHI BBFET. BB601M UHF RF Amplifier MPAK- ...

Page 2

... BB601M Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I ...

Page 3

... Main Characteristics Test Circuit for Operating Items ( Input , |yfs|, Ciss, Coss, Crss, NF, PG) D(op) Gate 1 Gate 2 Drain Application Circuit = 4 to 0.3 V AGC BBFET Source RFC Output BB601M 3 ...

Page 4

... BB601M 900MHz Power Gain, Noise Test Circuit Input L1 C4 — Variable Capacitor (10pF MAX) C1 Disk Capacitor (1000pF Air Capacitor (1000pF 4 L2: L4: RFC: 1mm Copper wire with enamel 4turns inside dia 6mm ...

Page 5

... Gate1 Voltage G2S 150 200 Drain to Source Voltage Ta (° (V) BB601M Typical Output Characteristics = Drain Current vs. Gate1 Voltage = Gate1 Voltage V (V) G1 ...

Page 6

... BB601M Drain Current vs. Gate1 Voltage Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage kHz Gate1 Voltage ( ...

Page 7

... (mA) Noise Figure vs. Gate Resistance G2S f = 900 MHz 20 50 Gate Resistance Noise Figure vs. Drain Current G2S R = variable 900 MHz Drain Current I (mA) D BB601M 100 ) 20 7 ...

Page 8

... BB601M Drain Current vs. Gate Resistance G2S Gate Resistance R Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage 100 900 MHz 4 3 (V) G2S Power Gain vs. ...

Page 9

... Gain Reduction vs. Gate2 to Source Voltage G2S Gate2 to Source Voltage V BB601M 1 0 (V) G2S 9 ...

Page 10

... BB601M S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Test Condition G2S — 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° –150° –120° ...

Page 11

... BB601M S22 ANG MAG ANG 78.1 0.997 –2.0 82.4 0.998 –4.2 78.7 0.997 –6.0 84.8 0.995 –8.1 76.3 0.994 –10.2 84.0 0.992 –12.2 79.0 0.990 –14.2 76.6 0.987 –16.2 80 ...

Page 12

... BB601M Package Dimensions 2.95 0.2 1.9 0.2 0.95 0.95 + 0.1 0.4 – 0. 0.1 0.6 – 0.05 0.85 0.95 1 0.1 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.16 – 0.06 0—0.1 Hitachi Code MPAK–4R EIAJ — — JEDEC Unit: mm ...

Page 13

... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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