BB601M Hitachi, BB601M Datasheet - Page 2

• Manufacturer Part Number: BB601M
• Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• Manufacturer: Hitachi

BB601M
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance c
Power gain
Noise figure
2
Symbol
V
V
V
I
|y
c
c
PG
NF
G1SS
G2SS
D(op)
iss
oss
rss
(BR)DSS
(BR)G1SS
(BR)G2SS
G1S(off)
G2S(off)
fs
|
Symbol
V
V
V
I
Pch
Tch
Tstg
D
DS
G1S
G2S
Min
6
+6
+6
—
—
0.5
0.5
7
19
1.4
0.7
—
17
—
Typ
—
—
—
—
—
0.7
0.7
10
24
1.7
1.1
0.019
21.5
1.85
Ratings
6
+6
– 0
+6
– 0
20
150
150
–55 to +150
Max
—
—
—
+100
+100
1.0
1.0
13
29
2.0
1.5
0.04
—
2.4
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test Conditions
I
V
I
V
I
V
V
V
V
V
V
I
V
I
V
V
V
V
R
V
V
f = 1MHz
V
V
f = 900MHz
D
G1
G2
D
D
G1S
G2S
G1S
G1S
G2S
G2S
G1S
DS
DS
DS
G2S
DS
G2S
DS
G2S
DS
G2S
G
= 200 A
= 100 A
= 100 A
Unit
V
V
V
mA
mW
= +10 A
= +10 A
= 47k , f = 1kHz
C
C
= 5V, V
= 5V, V
= 5V, V
= 5V, V
= 5V, V
= 5V, V
= V
= V
= V
= +5V
= V
= +5V
= V
= 4V, R
=4V
=4V, R
=4V, R
G2S
DS
DS
DS
DS
= 0
= 0
= 0
= 0
= 0
G2S
G1S
G1
G1
G1
G1
G
G
G
= 47k
= 47k
= 5V
= 5V
= 5V
= 5V
= 47k
= 4V
= 5V