PM45302F HITACHI, PM45302F Datasheet

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PM45302F

Manufacturer Part Number
PM45302F
Description
Manufacturer
HITACHI
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
PM45302F
Manufacturer:
HITACHI
Quantity:
38
Part Number:
PM45302F
Quantity:
10 000
Application
High Speed Power Switching
Features
Equipped with Power MOS FET
Low on-resistance
High speed switching
Low drive current
Wide area of safe operation
Inherent parallel diode between source and drain
Isolated base from Terminal
Suitable for motor driver, switching regulator and etc.
Silicon N-Channel MOS FET Module
PM45302F

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PM45302F Summary of contents

Page 1

... High Speed Power Switching Features Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. PM45302F ...

Page 2

... PM45302F Outline Absolute Maximum Ratings (Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1. Value 25° ...

Page 3

... V — 2.0 3.0 V — 0.13 0 — S — 6150 — pF — 2160 — pF — 240 — pF — 100 — ns — 480 — ns — 500 — ns — 400 — ns — 1.2 — V — 200 — ns PM45302F Test conditions mA ± ±100 µ 360 mA ...

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... PM45302F When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’ ...

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