DIM200MKS12-A000 Dynex Semiconductor, DIM200MKS12-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM200MKS12-A000
• Description: Igbt Modules - Chopper
• Manufacturer: Dynex Semiconductor

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DIM200MKS12-A000
TYPICAL CHARACTERISTICS
6/10
400
350
300
250
200
150
100
45
40
35
30
25
20
15
10
Fig. 5 Typical switching energy vs collector current
5
0
50
0
0
0
T
V
R
Common emitter
T
V
and not the auxiliary terminals
c
cc
g
case
ce
= 125˚C,
= 4.7 Ohms
= 600V,
Fig. 3 Typical output characteristics
is measured at power busbars
0.5
= 25˚C
50
Collector-emitter voltage, V
1.0
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
100
2.0
C
2.5
- (A)
ce
150
- (V)
3.0
V
V
V
V
GE
GE
GE
GE
3.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
200
4.0
55
50
45
40
35
30
25
20
15
10
200
150
100
400
350
300
250
5
0
50
Fig. 6 Typical switching energy vs gate resistance
4
0
0
T
V
I
C
c
cc
Common emitter
T
V
and not the auxiliary terminals
= 200A
= 125˚C,
case
ce
= 600V,
0.5
is measured at power busbars
Fig. 4 Typical output characteristics
= 125˚C
1.0
6
Collector-emitter voltage, V
Gate resistance, R
1.5
2.0
8
2.5
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g
3.0
- (Ohms)
3.5
ce
- (V)
10
4.0
V
V
V
V
GE
GE
GE
GE
4.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
12
5.0