DIM200MKS12-A000 Dynex Semiconductor, DIM200MKS12-A000 Datasheet
DIM200MKS12-A000
Related parts for DIM200MKS12-A000
DIM200MKS12-A000 Summary of contents
Page 1
... The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. ...
Page 2
... DIM200MKS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
Page 3
... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M4 DIM200MKS12-A000 Min. Typ. Max 194 - - 150 ...
Page 4
... DIM200MKS12-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) † V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM † V Diode forward voltage F (Antiparallel and freewheel diode) ...
Page 5
... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MKS12-A000 Test Conditions Min 200A - 15V - 600V - CE ...
Page 6
... DIM200MKS12-A000 TYPICAL CHARACTERISTICS 400 Common emitter T = 25˚C case V is measured at power busbars 350 ce and not the auxiliary terminals 300 250 200 150 100 0.5 1.0 1.5 2.0 Collector-emitter voltage, V Fig. 3 Typical output characteristics 125˚ 600V 4.7 Ohms ...
Page 7
... T 50 case 2.0 2.5 3.0 3 (V) F 1000 100 10 1 800 1000 1200 1400 0.001 - (V) R DIM200MKS12-A000 125˚C = 15V = 4.7 Ohms g 200 400 600 800 1000 Collector emitter voltage (V) ce Fig. 8 Reverse bias safe operating area 1 2 IGBT R (˚C/KW) 2.10 11.62 43.85 i (ms) 0.11 3 ...
Page 8
... DIM200MKS12-A000 350 300 250 200 150 100 Case temperature, T Fig current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 80 100 120 140 - (˚C) case www.dynexsemi.com ...
Page 9
... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 28 ± 0.5 28 ± 0 ± 0 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Module outline type code: M DIM200MKS12-A000 Fast on tabs 9/10 ...
Page 10
... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...