DIM200MKS12-A000 Dynex Semiconductor, DIM200MKS12-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM200MKS12-A000
• Description: Igbt Modules - Chopper
• Manufacturer: Dynex Semiconductor

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ELECTRICAL CHARACTERISTICS
T
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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case
case
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
E
t
t
E
Q
Q
Q
d(off)
d(on)
d(off)
d(on)
I
I
t
OFF
t
REC
t
OFF
t
REC
ON
ON
rr
rr
f
r
f
r
rr
rr
g
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
R
I
R
I
F
F
G(ON)
G(ON)
= 200A, V
dI
= 200A, V
dI
Test Conditions
Test Conditions
F
F
/dt = 1900A/ s
/dt = 2100A/ s
V
V
V
V
L ~ 100nH
L ~ 100nH
= R
= R
GE
GE
CE
I
CE
I
C
C
= 200A
= 200A
= 15V
= 600V
= 15V
= 600V
G(OFF)
G(OFF)
R
R
= 600V,
= 600V,
= 4.7
= 4.7
DIM200MKS12-A000
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
800
385
110
140
600
240
125
70
27
40
50
20
50
20
95
25
30
13
2
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C
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