PBSS4350 Philips Semiconductors, PBSS4350 Datasheet - Page 5

• Manufacturer Part Number: PBSS4350
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2000 Mar 08
handbook, halfpage
NPN transistor
T
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
Fig.6
amb
(A)
1.2
I C
0.8
0.4
B
B
B
B
B
B
= 25 C.
0
= 3.96 mA.
= 3.63 mA.
= 3.3 mA.
= 2.97 mA.
= 2.64 mA.
= 2.31 mA.
0
Collector current as a function of base
current and collector-emitter voltage.
0.5
(7) I
(8) I
(9) I
(10) I
(11) I
(12) I
B
B
B
B
B
B
1
= 1.98 mA.
= 1.65 mA.
= 1.32 mA.
= 990 A.
= 660 A.
= 330 A.
1.5
V CE (V)
MCD919
(10)
(11)
(12)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
2
5
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
(5) I
Fig.7
amb
(A)
I C
B
B
B
B
B
= 25 C.
5
4
3
2
1
0
= 150 mA.
= 135 mA.
= 120 mA.
= 105 mA.
= 90 mA.
0
Collector current as a function of base
current and collector-emitter voltage.
0.5
(6) I
(7) I
(8) I
(9) I
(10) I
B
B
B
B
B
= 75 mA.
= 60 mA.
= 45 mA.
= 30 mA.
= 15 mA.
(10)
(8)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(9)
1
PBSS4350D
Product specification
1.5
V CE (V)
MCD920
2