PBSS4350 Philips Semiconductors, PBSS4350 Datasheet - Page 3

• Manufacturer Part Number: PBSS4350
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
CHARACTERISTICS
T
Note
1. Pulse test t
2000 Mar 08
R
I
I
h
V
V
V
C
f
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
th j-a
c
NPN transistor
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
p
thermal resistance from junction to ambient in free air;
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
300 s,
PARAMETER
0.02.
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
E
C
3
CE
I
I
I
= 0; V
= 0; V
= I
= 0; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 1 A; V
= 100 mA; V
C
C
C
= 2 V;
= 500 mA
= 1 A; note 1
= 2 A; note 1
e
= 0; V
note 1
note 2
CB
CB
EB
B
B
B
CONDITIONS
CE
= 50 V
= 50 V; T
= 5 V
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
CB
CONDITIONS
= 2 V; note 1
B
CE
= 10 V; f = 1 MHz
= 50 mA
= 5 V;
j
= 150 C
200
200
100
100
MIN.
VALUE
PBSS4350D
Product specification
208
160
100
50
100
90
170
290
1.2
1.1
30
MAX.
2
2
UNIT
K/W
K/W
.
.
nA
nA
mV
mV
mV
V
V
pF
MHz
UNIT
A