PBSS4350 Philips Semiconductors, PBSS4350 Datasheet - Page 2

• Manufacturer Part Number: PBSS4350
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5350D.
MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2000 Mar 08
TYPE NUMBER
PBSS4350D
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
High current capabilities
Low V
Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers
V
voltage IC applications
All battery driven equipment to save battery power.
CBO
CEO
EBO
tot
NPN transistor
CEsat
SYMBOL
CEsat
critical applications such as the latest low supply
CEsat
.
transistor in a SC-74 plastic package.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
MARKING CODE
PARAMETER
43
2
PINNING
handbook, halfpage
open emitter
open base
open collector
T
amb
note 1
note 2
Fig.1
=
PIN
1
2
3
4
5
6
CONDITIONS
25 C
Simplified outline (SOT457) and symbol.
Top view
6
1
collector
collector
base
emitter
collector
collector
5
2
4
3
DESCRIPTION
MAM436
MIN.
65
65
Product specification
PBSS4350D
3
1, 2, 5, 6
60
50
6
3
5
1
600
750
+150
150
+150
4
MAX.
2
2
.
.
V
V
V
A
A
A
mW
mW
UNIT
C
C
C