BFQ591 Inchange, BFQ591 Datasheet

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BFQ591

Manufacturer Part Number
BFQ591
Description
Silicon RF Transistor
Manufacturer
Inchange
Datasheet
1.BFQ591.pdf (4 pages)

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www.DataSheet4U.com
INCHANGE Semiconductor
isc
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for use in MATV or CATV amplifiers and RF
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
V
V
V
communications subscribers equipment.
T
P
T
CBO
CEO
EBO
I
stg
C
C
J
Silicon NPN RF Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-65~150
VALUE
2.25
200
175
20
15
3
UNIT
mA
W
℃
℃
V
V
V
isc
RF Product Specification
BFQ591

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BFQ591 Summary of contents

Page 1

... Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current-Continuous C Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn isc ℃) =25 a VALUE UNIT 200 mA 2.25 W ℃ 175 ℃ -65~150 RF Product Specification BFQ591 ...

Page 2

... 12V; f= 1MHz 70mA ; V = 12V; f= 1GHz C CE note −6 dB 795.25 MHz isc RF Product Specification BFQ591 MIN TYP. MAX 0.1 60 250 7 11 5.5 0.8 10 700 = 803.25 MHz 803.25 MHz UNIT μA GHz dB ...

Page 3

... INCHANGE Semiconductor isc Silicon NPN RF Transistor www.DataSheet4U.com isc Website：www.iscsemi.cn isc RF Product Specification BFQ591 ...

Page 4

... INCHANGE Semiconductor isc Silicon NPN RF Transistor www.DataSheet4U.com isc Website：www.iscsemi.cn isc RF Product Specification 4 BFQ591 ...

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