2SC2757 Inchange, 2SC2757 Datasheet
2SC2757
Manufacturer Part Number
2SC2757
Description
Silicon Power Transistor
Manufacturer
Inchange
Datasheet
1.2SC2757.pdf
(2 pages)
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Part Number
Manufacturer
Quantity
Price
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Part Number:
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www.DataSheet4U.com
INCHANGE Semiconductor
isc
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
stg
C
C
J
Silicon NPN RF Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-55~125
VALUE
0.15
125
30
15
50
5
UNIT
mA
W
℃
℃
V
V
V
isc
RF Product Specification
2SC2757
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2SC2757 Summary of contents
Page 1
... Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current-Continuous C Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn isc =25 ℃) a VALUE UNIT 0.15 W ℃ 125 ℃ -55~125 RF Product Specification 2SC2757 ...
Page 2
... Website：www.iscsemi.cn CONDITIONS I = 10mA ; I = 1mA 12V 5mA ; V = 10V 5mA ; V = 10V 10V;f= 1.0MHz 5mA ; V = 10V;f= 31.9MHz C CB T34 120-240 2 isc RF Product Specification 2SC2757 MIN TYP. MAX 0.5 0.1 60 240 800 1100 1 UNIT V μA MHz pF ps ...