2SC2845 Inchange, 2SC2845 Datasheet
2SC2845
Manufacturer Part Number
2SC2845
Description
Silicon Power Transistor
Manufacturer
Inchange
Datasheet
1.2SC2845.pdf
(2 pages)
www.DataSheet4U.com
INCHANGE Semiconductor
isc
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
stg
C
C
J
Silicon NPN RF Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-55~125
VALUE
125
2.5
0.2
25
12
70
UNIT
mA
W
℃
℃
V
V
V
isc
RF Product Specification
2SC2845
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2SC2845 Summary of contents
Page 1
... CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current-Continuous C Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn isc ℃) =25 a VALUE UNIT 2 0.2 W ℃ 125 ℃ -55~125 RF Product Specification 2SC2845 ...
Page 2
... Website：www.iscsemi.cn isc RF Product Specification CONDITIONS V = 15V 2V 20mA ; V = 10V -20mA ; V = 10V 10V; f= 1.0MHz 20mA 10V; f= 0.8GHz 5mA 10V; f= 0.8GHz 2SC2845 MIN TYP. MAX UNIT μA 0.1 μA 0.1 40 200 4.5 GHz 1.0 1.5 pF 8 ...