2SA747 Inchange Semiconductor, 2SA747 Datasheet

2SA747

Manufacturer Part Number

2SA747

Description

POWER TRANSISTOR

Manufacturer

Inchange Semiconductor

Datasheet

1.2SA747.pdf (3 pages)

Current page: 1 of 3
Download datasheet (157Kb)

Silicon PNP Power Transistors

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

·Complement to type 2SC1116

APPLICATIONS

·For audio and general purpose

PINNING(see Fig.2)

Absolute maximum ratings(Ta=

Inchange Semiconductor

SYMBOL

applications

CBO

CEO

EBO

stg

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

CONDITIONS

Fig.1 simplified outline (TO-3) and symbol

Product Specification

-65~150

VALUE

-120

100

150

-10

-6

-4

2SA747

UNIT

℃

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2SA747 Summary of contents

Page 1

... B P Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SA747 VALUE UNIT -120 V -120 - 100 W ℃ 150 ℃ -65~150 ...

Page 2

... I =-0. =-5A; I =-0. =-120V =- =-0. =-12V =-12V;R =4Ω;I =- =-200mA,I =50mA Product Specification 2SA747 MIN TYP. MAX UNIT -120 -2.0 V -2.5 V -0 MHz μs 1.2 μs 3.3 μs 0.8 ...

Page 3

... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Product Specification 3 2SA747 ...

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