BFG19 Infineon Technologies AG, BFG19 Datasheet - Page 6

• Manufacturer Part Number: BFG19
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies AG

Power Gain G
f = Parameter
Power Gain G
V
CE
dB
dB
= Parameter
14
10
36
28
24
20
16
12
8
6
4
2
0
8
4
0
0.0
0
I
I
C
C
=70mA
=70mA
0.5
2
ma
ma
1.0
, G
| S
4
, G
21
ms
1.5
|
ms
2
= f(V
= f(V
6
= f(f)
2.0
CE
CE
8
):---------
2.5
):_____
0.9GHz
1.8GHz
1.8GHz
GHz
V
0.9GHz
10V
2V
1V
0.7V
V
f
CE
3.5
12
6
Intermodulation Intercept Point IP
(3rd order, Output, Z
Power Gain |S
V
V
CE
CE
dBm
dB
= Parameter, f = 900MHz
40
30
25
20
15
10
32
24
20
16
12
=
-4
-8
8
4
0
0.0
0
Parameter
I
C
=70mA
0.5
20
21
1.0
|
40
2
S
= f(f)
=Z
1.5
L
=50
60
1V
2.0


)
80
2.5
Oct-26-1999
BFG 19S
2V
mA
GHz
3
8V
5V
3V
10V
2V
1V
0.7V
=f(I
I
f
C
120
3.5
C
)