BFG19 Infineon Technologies AG, BFG19 Datasheet

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BFG19

Manufacturer Part Number
BFG19
Description
NPN Silicon RF Transistor
Manufacturer
Infineon Technologies AG
Datasheet

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NPN Silicon RF Transistor

ESD: Electrostatic discharge sensitive device, observe handling precaution!
Thermal Resistance
Junction - soldering point
Type
BFG 19S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T
Junction temperature
Ambient temperature
Storage temperature
1 T
For low noise, low distortion broadband
amplifiers in antenna and
telecommunication systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
S
is measured on the collector lead at the soldering point to the pcb
Marking
BFG19S
S

75 °C
1)
1 = E
Pin Configuration
2 = B
1
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = E
4
4 = C
-65 ... 150
-65 ... 150
Value

100
150
15
20
20
12
3
1
75
Package
SOT-223
1
Oct-26-1999
BFG 19S
2
VPS05163
Unit
V
mA
W
°C
K/W
3

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BFG19 Summary of contents

Page 1

... For low noise, low distortion broadband  amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 19S BFG19S Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current ...

Page 2

Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage = 1 mA Collector-emitter cutoff current = Collector-base cutoff current = ...

Page 3

Electrical Characteristics at T Parameter AC characteristics (verified by random sampling) Transition frequency = 70 mA 500 MHz Collector-base capacitance = MHz V CB Collector-emitter capacitance ...

Page 4

Total power dissipation P * Package mounted on epoxy 1200 mW 1000 900 800 700 600 500 400 T A 300 200 100 Permissible Pulse Load K 0.5 0.2 ...

Page 5

Collector-base capacitance 1MHz 2.6 pF 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Power Gain f 0.9GHz V = Parameter CE ...

Page 6

Power Gain f f Parameter 14 =70mA Power Gain ...

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