BFG19 Infineon Technologies AG, BFG19 Datasheet - Page 3

• Manufacturer Part Number: BFG19
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies AG

Electrical Characteristics at T
Parameter
AC characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Third order intercept point
I
f = 900 MHz
1
C
C
C
C
C
G
CB
CE
EB
= 70 mA, V
= 20 mA, V
= 70 mA, V
= 30 mA, V
= 70 mA, V
ma
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
= | S
21
/ S
CE
CE
CE
CE
CE
12
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
| (k-(k
(verified by random sampling)
2
-1)
S
S
S
S
= Z
= Z
= Z
= Z
1/2
)
Sopt
Sopt
L
L
= 50
A
= 50
F)
= 25°C, unless otherwise specified.
, Z
,




L
,
= Z
,
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
IP
T
cb
ce
eb
ma
21e
3
|
2
min.
4
-
-
-
-
-
-
-
-
-
-
Values
0.85
13.5
typ.
5.5
0.4
4.6
2.5
11
35
4
8
5
max.
1.4
Oct-26-1999
-
-
-
-
-
-
-
-
-
-
BFG 19S
Unit
GHz
pF
dB
dBm