MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 6

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
6
19
18
17
16
15
0
Figure 10. Power Gain versus Output Power
V
DD
2
= 12 V
P
out
4
, OUTPUT POWER (WATTS) CW
16 V
6
20 V
8
50
40
30
20
10
20
19
18
17
16
15
0
0.1
0.1
24 V
10
T
25_C
Figure 8. Single - Carrier CDMA ACPR, Power
85_C
TYPICAL CHARACTERISTICS
C
G
V
I
f = 945 MHz
= −30_C
DQ
ps
DD
Figure 9. Power Gain and Power Added
= 125 mA
= 28 Vdc
Gain and Power Added Efficiency
12
Efficiency versus Output Power
28 V
I
f = 945 MHz
DQ
P
P
out
= 125 mA
out
14
, OUTPUT POWER (WATTS) AVG.
versus Output Power
, OUTPUT POWER (WATTS) CW
1
32 V
G
η
ps
D
16
1
−30_C
24
20
16
12
8
4
0
500
ACPR
Figure 11. Broadband Frequency Response
10
V
P
I
DQ
DD
out
600
η
— 900 MHz
D
= 125 mA
= 28 Vdc
= 10 W CW
V
I
f = 945 MHz
DQ
DD
25_C
700
= 125 mA
= 28 Vdc
85_C
f, FREQUENCY (MHz)
100
800
10
50
40
30
20
10
−10
−20
−30
−40
−50
0
−60
900
S11
S21
1000
Freescale Semiconductor
1100
RF Device Data
1200
5
0
−5
−10
−15
−20
−25