MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 15

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
aaa
D
M
C
A
PIN 2
aaa
H
c1
M
2X
b1
PIN 3
D2
B
C
A
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç
BOTTOM VIEW
bbb
DETAIL Y
E1
E4
E2
E5
E3
2X
E5
2X
E
M
C
B
MW6S010GNR1(GMR1)
D3
HEATSINK AREA
2X
EXPOSED
TO - 270- 2 GULL
CASE 1265A - 02
A
PIN 1
D1
PLASTIC
A
ISSUE A
D
PIN ONE ID
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
A2
SEATING
PLANE
e
NOTES:
L
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
6. DATUMS −A− AND −B− TO BE DETERMINED AT
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
PER ASME Y14.5M−1994.
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DATUM PLANE −H−.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
STYLE 1:
DIM
aaa
A1
A2
D1
D2
D3
E1
E2
E3
E4
E5
L1
b1
c1
A
D
E
L
e
PIN 1. DRAIN
2. GATE
3. SOURCE
MIN
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
.018
.193
.007
DETAIL Y
2
.01 BSC
INCHES
°
.004
MAX
.082
.004
.088
.424
.382
.320
.024
.324
.242
.074
.180
.066
.235
.024
.199
.011
8
°
10.57
MILLIMETERS
MIN
1.98
0.02
1.96
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
4.90
4.90
0.18
0.25 BSC
2
°
0.10
L1
10.77
MAX
A1
2.08
0.10
2.24
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
5.06
5.06
0.28
GAGE
PLANE
8
°
15