MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 5

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
−15
−20
−25
−30
−35
−40
−45
−50
−55
0.1
0.1
V
Two −Tone Measurements
100 kHz Tone Spacing
Figure 6. Intermodulation Distortion Products
DD
V
I
Center Frequency = 945 MHz
DQ
DD
= 28 Vdc, f = 945 MHz
Figure 4. Two - Tone Power Gain versus
90 mA
= 125 mA, Two −Tone Measurements
I
= 28 Vdc, P
DQ
= 190 mA
125 mA
P
out
, OUTPUT POWER (WATTS) AVG.
out
versus Tone Spacing
TWO −TONE SPACING (MHz)
5th Order
1
= 10 W (Avg.)
1
Output Power
3rd Order
7th Order
48
44
40
36
32
28
24
20
16
910
V
I
DQ
TYPICAL CHARACTERISTICS
DD
Figure 3. Two - Tone Wideband Performance
10
10
= 125 mA, 100 kHz Tone Spacing
= 28 Vdc, P
920
out
930
= 10 W (Avg.)
IMD
@ P
f, FREQUENCY (MHz)
100
η
100
out
D
IRL
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
940
= 10 Watts
G
ps
−70
950
−10
−20
−30
−40
−50
−60
48
46
44
42
40
38
0.1
19
V
f = 945 MHz, Two −Tone Measurements
100 kHz Tone Spacing
P1dB = 42.23 dBm (16.71 W)
— 900 MHz
DD
Figure 5. Intermodulation Distortion Products
Figure 7. Pulse CW Output Power versus
= 28 Vdc, I
960
P3dB = 43.14 dBm (20.61 W)
21
P
DQ
out
970
= 125 mA
, OUTPUT POWER (WATTS) AVG.
versus Output Power
P
−8
−10
−12
−14
−16
−18
−20
−22
−24
−26
in
1
, INPUT POWER (dBm)
23
Input Power
V
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 945 MHz
DD
= 28 Vdc, I
25
DQ
10
= 125 mA
27
5th Order
3rd Order
7th Order
Ideal
Actual
29
100
5