MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 2

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Two - Tone Test, 100 kHz Tone Spacing
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V
420 MHz<Frequency<470 MHz, Two - Tone Test, 100 kHz Tone Spacing
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
= 100 µAdc)
= 125 mAdc)
= 0.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
I
I
I
C
DD
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
η
η
= 125 mA, P
1
oss
iss
rss
ps
D
ps
D
= 28 Vdc, I
17.5
Min
Package Peak Temperature
out
1.5
DQ
—
—
—
—
—
—
—
—
31
—
—
—
—
—
—
= 10 W PEP, f = 960 MHz,
= 150 mA, P
0.27
0.32
260
Typ
- 37
- 18
- 40
- 10
2.3
3.1
23
10
18
32
20
33
—
—
—
out
Class
Freescale Semiconductor
= 10 W PEP,
1A
III
A
Max
0.35
20.5
- 33
- 10
10
—
—
—
—
—
—
—
—
—
1
1
3
RF Device Data
µAdc
µAdc
µAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
°C
pF
pF
pF
%
%